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与现有的薄膜晶体管技术相比,碳纳米管薄膜晶体管(CNT-TFT)具有载流子迁移率高、稳定性好、加工温度低、工艺过程简单的优势,因而被认为在显示驱动背板、柔性电子器件及传感器等方面具有广泛的实用前景.通常CNT-TFT的制备多是采用CNT溶液沉积法,在基底上得到的是无序的网络状薄膜,存在大量的CNT交叉结.受CNT材料制备的限制,溶液中通常含有一定比例的金属型CNT,从而有可能形成连接源漏电极的金属
Compared with the existing thin film transistor technology, the carbon nanotube thin film transistor (CNT-TFT) has the advantages of high carrier mobility, good stability, low processing temperature and simple process. Therefore, it is considered that when the display driving backplane , Flexible electronic devices and sensors has a wide range of practical prospects.Usually CNT-TFT preparation is mostly the use of CNT solution deposition method, obtained on the substrate is a network of disorderly network film, there are a large number of CNT cross-junction by the CNT Material preparation limitations, the solution usually contains a certain percentage of the metal type CNT, so that it is possible to form a metal source and drain electrodes