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晶圆背面的污染降低了半导体器件的成品率,而当器件进入100nm技术节点之后成品率的降低便显得尤为重要。因此,目前众多的器件制造厂家就要求在进行片子正面清洗的同时对其背面也能够实现清洗。由Akrion公司制造的Mach2HP系统就是这样一种单片清洗设备,它具有清洗晶圆正反两面的功能。在起初评价时,设备经过了大量的粒子去除效率的变化。这种大量的变化使我们不能了解这种设备真实的清洗能力。氮化硅(Si3N4)粒子污染的晶片被用以进行粒子去除效率测试。我们发现有Si3N4粒子的晶片引起了背面粒子去除效率的变化。这种含Si3N4粒子的晶片是通过在裸芯片上沉积Si3N4粒子而特意准备的。我们发现,一些较大的Si3N4粒子在晶片清洗时又分解成更小的粒子。如若在清洗之后分解的粒子仍保留在晶片上,它们便会降低晶片总的粒子去除效果。因此,在这些粒子沉积到晶片上之前,这些粒子群需要进一步分解成实际的粒子。经过了解晶片的预习处理,我们实现了这种清洗设备背面清洗效果的评价。
Contamination on the backside of the wafer reduces the yield of the semiconductor device, which is particularly important when the device enters the 100nm technology node. Therefore, a large number of device manufacturers are required to clean the back of the film while cleaning the front of the film. The Mach2HP system, manufactured by Akron, is such a monolithic cleaning device that cleans the front and back of the wafer. At initial evaluation, the equipment undergoes a significant amount of particle removal efficiency changes. This large number of changes prevented us from knowing the true cleaning capabilities of such equipment. Silicon nitride (Si3N4) particle contaminated wafers were used for particle removal efficiency testing. We found that wafers with Si3N4 particles caused changes in particle removal efficiency on the back side. This Si3N4 particle-containing wafer was prepared by depositing Si3N4 particles on a bare chip. We found that some larger Si3N4 particles break down into smaller particles during wafer cleaning. If the particles that are decomposed remain on the wafer after cleaning, they will reduce the total particle removal of the wafer. Therefore, before these particles are deposited on the wafer, these groups of particles need to be further broken down into actual particles. After understanding the pre-processing of the wafer, we achieved the evaluation of the cleaning effect on the back of the cleaning device.