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本文研究了 2 MeV电子辐照对硅双极外延平面晶体管交流参数的影响.结果表明,在7×10~(14)cm~(-2)注入剂量下、输出电容已。有明显减小,特征频率f_T基本不变,而功率增益G_p稍有增加.用多数载流子去除效应讨论了辐照后这些参数的变化和性质.
In this paper, the effects of 2 MeV electron irradiation on the AC parameters of silicon bipolar transistor have been investigated. The results show that the output capacitance of the bipolar transistor is about 7 × 10 ~ (14) cm ~ (-2). And the characteristic frequency f_T is basically unchanged, while the power gain G_p is slightly increased.The variations and properties of these parameters after irradiation are discussed with the majority carrier removal effect.