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氮氧化技术使 SiO_2的应用向45nm 节点迈进。氮的引入是一项复杂的工艺,由于这一工艺诱发的界面陷获电荷对栅介质完整性十分关键,因此要求进行严格的控制。
Nitrogen oxidation technology to the application of SiO_2 45nm node forward. The introduction of nitrogen is a complex process that requires stringent controls due to trapped charges at the interface induced by this process that are critical to gate dielectric integrity.