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研制了一种新模式的半导体场效应晶体管——垂直沟道的偶载场效应晶体管(VDCFET) ,这种结构可以避免现有光刻技术的制约 ,使用常规的半导体双极晶体管工艺 ,既可把有效沟道长度减短 ,大大提高器件的速度 ,又可将电源电压降低到小于 1 V,大幅度降低功耗 ,改进其电学性能 .本器件可应用于高频电路、D触发器、环振电路及反相器等重要电路 .从纵向和横向报道了器件的设计思想 ,并给出了器件特性的测量结果 .
A new type of semiconductor field effect transistor, a vertical channel even field effect transistor (VDCFET), has been developed that avoids the limitations of current lithography techniques and uses conventional semiconductor bipolar transistor technology, either The effective channel length is shortened, greatly improve the speed of the device, but also the supply voltage is reduced to less than 1 V, significantly reduce power consumption and improve its electrical performance.This device can be used in high frequency circuits, D flip-flop, ring Vibration circuit and inverter and other important circuits.According to the vertical and horizontal reports of the design of the device, and gives the measurement results of the device characteristics.