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本文在20°—300°K研究了室温载流子浓度2×10~(12)—1×10~(20)cm~(-3)含硼或磷(砷)Si的电学性质。单晶Si材料是由直拉法与浮带法所制备的。研究用的样品均垂直拉晶方向[111]切成16×4×2毫米~3的矩形。电极用冷压金丝或铝合金化经压触来达到欧姆接触。电阻<10~5欧姆的样品,用直流补偿法来进行测量,电阻>10~5欧姆的样品,则采用DC-1静电计电路来进行测量,前者实验误差为±5％,后者为±10％。从霍尔系数与电阻率的温度关系分析指出,对于较纯样品的硼受主能级的电离能为4.5×10~(-2)ev(位于价带上),磷施主能级的
In this paper, the electrical properties of boron-containing or phosphorus (arsenic) Si with carrier concentration of 2 × 10 ~ (12) -1 × 10 ~ (20) cm ~ (-3) at room temperature were investigated at 20 ° -300 ° K. Single crystal Si material is prepared by the Czochralski method and the float zone method. The samples used for the study were each cut into a rectangle of 16 × 4 × 2 mm ~ 3 in the direction perpendicular to crystal pulling [111]. Electrode with cold pressed gold or aluminum alloy pressed to achieve ohmic contact. The samples with resistance <10 ~ 5 ohms were measured by DC compensation. The samples with resistance> 10 ~ 5 ohms were measured by DC-1 electrometer circuit. The former had an experimental error of ± 5% and the latter ± 10%. From the analysis of the temperature dependence of Hall coefficient and resistivity, it is pointed out that the ionization energy of boron acceptor level for the pure sample is 4.5 × 10 -2 ev (located on the valence band), and the phosphorus donor level