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提出利用深能级瞬态谱（ Ｄ Ｌ Ｔ Ｓ） 技术研究 Ｍ Ｎ Ｏ Ｓ 结构中界面陷阱的分布，阐述并建立了 Ｍ Ｎ Ｏ Ｓ结构 Ｄ Ｌ Ｔ Ｓ 存储峰和界面态峰的解析理论，并给出区分这两个谱峰的实验方法对研制的 Ｍ Ｎ Ｏ Ｓ 结构进行的 Ｄ Ｌ Ｔ Ｓ测量描述了理论结果，所获得的存储陷阱和界面态的分布规律与应用热激电流谱和保留特性方法交叉研究的结果一致上述理论也可用于含有陷阱的其它介质 Ｍ Ｉ Ｓ 结构的 Ｄ Ｌ Ｔ Ｓ 分析
The distribution of interface traps in M N O S structure is proposed by using D L T S technique. The analytic theory of D L T S storage peak and interface state peak in M N O S structure is described and established. And give the experimental method to distinguish the two peaks. The measurement of D L T S for the developed M N O S structure describes the theoretical results, the distribution of the memory traps and interface states obtained, and the application of the heat shock current spectrum The results are in good agreement with the results of the cross-validation of the retention properties method. The above theory can also be applied to the D L T S analysis of the M I S structure of other media with traps