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图1是DRAM的集成度和最小线宽的关系及其估计使用的抗蚀剂。现在,最小线宽为0.8μm的4MDRAM的集成电路已在大批生产,而0.5μm的16MDRAM的已在试制。本文将对制造超LSI必不可少的微光刻术用的抗蚀剂研制动向和展望进行概述。作为超LSI用的抗蚀剂,根据曝光所用的光源,相应地可举出g线(光波长436nm)、i线(光波长365nm)用的光致抗蚀剂以及激元激光用的抗蚀剂、电子束用抗蚀剂,于显影抗蚀剂、X射线抗蚀剂等等。现以实用性高的g线及i线用的抗蚀剂为中心进行介绍。
Figure 1 shows the relationship between DRAM integration and minimum linewidth and the estimated resist used. Now, the minimum width of 0.8μm 4MDRAM integrated circuits have been in mass production, while the 0.5μm 16MDRAM has been trial. This article will outline the trends and prospects for the development of resists for microlithography that are essential for the manufacture of ultra-LSI. Examples of the light source for exposure to light for exposure to super LSI include photoresists for g-line (optical wavelength: 436 nm), i-line (optical wavelength: 365 nm) and resist for excimer laser Agents, electron beam resist, development resist, X-ray resist, and the like. Now practical high g-line and i-line resist for the center are introduced.