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利用磁控溅射方法在镀Pt的Si(100)衬底上沉积制备NiO_x薄膜,研究了氧分压对薄膜微结构和电阻开关特性的影响.微结构观测分析结果表明:在20%氧分压下,可获得沿[200]晶向择优生长的NiO_x多晶薄膜,薄膜表面平整致密,晶粒平均直径约为13.8nm,垂直衬底生长形成柱状晶粒结构.磁性测试结果显示薄膜具有典型的铁磁性磁化曲线,但薄膜饱和磁矩随着氧分压增加急剧降低.电学测试结果表明20%氧分压氛围下沉积制备薄膜样品的电流-电压曲线呈现出典型的双极性电阻开关特性:在-0.6V读取电压下,可获得大于10的高/低电阻态阻值比.指数定律拟合电流-电压实验曲线表明:薄膜低电阻态漏电流为欧姆接触电导;而薄膜处于高电阻态时,低电压下的漏电流仍以欧姆接触电导为主,高电压下则以缺陷主导的空间电荷限制电流为主.
The effect of oxygen partial pressure on the microstructures and the resistance switching characteristics of thin films was investigated by magnetron sputtering method deposited on Si (100) substrate with Pt substrate.The results of microstructure observation showed that under the conditions of 20% oxygen The NiO_x polycrystalline films, which were preferentially grown along the [200] orientation, were obtained by pressing, and the surface of the films was smooth and compact.The average diameter of the films was about 13.8 nm, and the growth of the vertical substrate formed a columnar grain structure.The magnetic test results showed that the films were typical , But the saturation magnetization decreases sharply with the increase of partial pressure of oxygen.The electrical test results show that the current-voltage curves of the deposited samples deposited under the partial pressure of 20% oxygen show typical bipolar resistance switching characteristics : A high / low resistance ratio of more than 10 can be obtained at a reading voltage of -0.6 V. The exponential law fitting the current-voltage experimental curve shows that the film low resistance state leakage current is ohmic contact conductivity and the film is at high In the resistive state, the leakage current at low voltage is still dominated by ohmic contact conductivity, while the defect-dominated space-charge-limited current is dominated at high voltage.