采用分子束外延(MBE)在GaAs衬底上生长GaSb薄膜,为了减小因晶格失配度较大所引起的位错密度,采用低温GaSb作为缓冲层。通过X射线双晶衍射仪和原子力显微镜分析得出,当低温GaSb缓冲层的厚度为20nm时,GaSb外延层中的位错密度最小,晶体质量最好。此外,缓冲层和外延层的厚度共同对GaSb薄膜晶体质量和表面形貌产生影响。 GaSb thin films are grown on GaAs substrates by molecular beam epitaxy (MBE). In order to reduce the dislocation density caused by large lattice mismatch, low temperature GaSb is used as the buffer layer. The X-ray double crystal diffractometer and atomic force microscopy analysis showed that when the thickness of low-temperature GaSb buffer layer is 20nm, the dislocation density in the GaSb epitaxial layer is the smallest, and the crystal quality is the best. In addition, the thickness of the buffer layer and the epitaxial layer together have an influence on the crystal quality and the surface topography of the GaSb thin film.