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据日本《日经工卜夕卜口二夕又》1993年第571期报道,日本富士通公司已开发开关电流为0.32mA,ECL延迟时间为21.5ps的硅双极技术,可应用于将来超级计算机和通用大型计算机的高速双极LSI,其特点是具有0.5μm的基极宽度。基极—集电极间的电容很小,为2.2fF,使其形成高速。采用双层多晶硅自匹配技术,在多晶硅侧壁使基极和第1层多晶硅连接。在同样尺寸的样品中,基极面积为以前高速双极技术(已用于超级计算机VP2000系列工艺的技
According to Japan’s “Nikkei Bu Bu mouth eve of the evening,” 1993 No. 571 reported that Japan’s Fujitsu company has developed a switch current of 0.32mA, ECL delay time of 21.5ps silicon bipolar technology can be applied to future supercomputer And a general-purpose mainframe high-speed bipolar LSI featuring a base width of 0.5 μm. The base-collector capacitance is very small, 2.2fF, making it a high-speed. Using double-layer polysilicon self-matching technology, the polysilicon in the polysilicon base and the first layer of polysilicon connections. In the same size samples, the base area of the previous high-speed bipolar technology (supercomputer VP2000 series technology has been used