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A rapid and simple approach to fabricate large-area surface-enhanced Raman scattering-active(SERS-active) substrates is reported.The substrates are fabricated by using femtosecond laser(fs-laser) direct writing on Silicon wafers,followed by thin-film coating of metal such as gold.The substrates are demonstrated to exhibit signal homogeneity and good enhancement ability for SERS.The maximum enhancement factor(EF) up to 3×10 7 of such SERS substrates for rhodamine 6G(R6G) at 785 nm excitation wavelength was measured.This technique could demonstrate a functional microchip with SERS capability of signal homogeneity,high sensitivity and chemical stability.
A rapid and simple approach to fabricate large-area surface-enhanced Raman scattering-active (SERS-active) substrates are reported by the femtosecond laser (fs-laser) direct writing on Silicon wafers, followed by thin- film coating of metal such as gold. These substrates are demonstrated to exhibit signal homogeneity and good enhancement ability for SERS. maximum intensity factor (EF) up to 3 × 10 7 of such SERS substrates for rhodamine 6G (R6G) at 785 nm excitation wavelength was measured. This technique could demonstrate a functional microchip with SERS capability of signal homogeneity, high sensitivity and chemical stability.