到目前为止,极大多数的分立元件和集成电路的制造都是采用液态三溴化硼或者汽态乙硼烷作为硅热扩散的 P 型扩散源。这两种方法都不能完全满足一个理想系统的要求:相等的杂质物质转移到所有硅片上,每一硅片所有部位都有均匀的杂质浓度; To date, the vast majority of discrete components and integrated circuits have been manufactured using either liquid boron tribromide or diborane as the P-type diffusion source for thermal diffusivity of silicon. Neither of these two approaches fully satisfy the requirements of an ideal system: equal impurities are transferred to all silicon wafers, with a uniform concentration of impurities in all parts of each wafer;