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使用实验室自制的低温近场光学显微镜研究了InGaN/GaN多量子阱发光二极管在室温和液氮温度下的近场光学像和近场光谱,发现随着温度的降低,不仅近场光学像的光强起伏大大减小,量子阱发光峰先蓝移后红移,而且在液氮温度下在光子能量更高的位置上出现了新的发光峰.通过对实验结果的分析,我们将这个新出现的峰归结为p-GaN层中导带底-受主能级间跃迁形成.
Near-field optical and near-field spectra of InGaN / GaN multi-quantum well LEDs at room temperature and liquid nitrogen temperature were investigated using a home-made low temperature near field optical microscope. It was found that with the decrease of temperature, not only the near-field optical image The luminosity of the quantum well is greatly reduced, the blue-shift of the quantum well luminescence peak is red-shifted first, and a new luminescence peak appears at a higher photon energy position under the liquid nitrogen temperature.After analyzing the experimental results, The peak appears attributed to the p-GaN layer conduction band bottom - acceptor level transition between the formation.