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测试了几种不同条件下制备的多孔硅样品的深能级谱（DLTS）。结果发现，其深能级都处于禁带深处，其位置和相对浓度随样品不同而不同。对测得的谱线进行了计算和分析，并联系多孔挂的表面状态作了分析和讨论。
The deep level spectra (DLTS) of porous silicon samples prepared under several different conditions were tested. The results showed that its deep level are in the band gap depth, the location and relative concentration varies with the sample. The measured spectra were calculated and analyzed, and the surface condition of the porous hanging was analyzed and discussed.