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本文用自制的TMGa、TMAl和外延设备研究了MOCVD生长GaAs、Ga-AlAs,并用SiH_4进行了n型掺杂实验。分析了生长条件对GaAs外延层生长速率和电学参数及GaAlAs中Al组分和As组分的影响。用SiH_4掺杂的GaAs的载流子浓度及GaAlAs中的Al组分均可自由调节。用GaAlAs作缓冲层、GaAs作有源层制得了直流跨导g_m为160mS/mm的MESFET器件。
In this paper, GaAs and Ga-AlAs were grown by MOCVD using self-made TMGa, TMAl and epitaxial devices, and n-type doping experiments were performed with SiH_4. The effects of growth conditions on the growth rate and electrical parameters of GaAs epilayers and the Al and GaAs As components were analyzed. The carrier concentration of GaAs doped with SiH 4 and the Al composition of GaAlAs are freely adjustable. GaAsAs buffer layer and GaAs active layer were used to fabricate MESFET devices with DC transconductance gm of 160mS / mm.