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采用铟锡合金靶 (铟 锡 ,90 - 10 ) ,通过直流反应磁控溅射在玻璃基片上制备出ITO薄膜 ,并在大气环境下高温退火处理。研究了退火温度对薄膜结构、光学和电学性能的影响。研究表明 ,随着退火温度升高薄膜的电学特性得到很大提高
Indium - tin alloy target (indium tin, 90 - 10) was used to prepare ITO thin films on glass substrates by direct current reactive magnetron sputtering and annealed at high temperature in the atmosphere. The effects of annealing temperature on the structure, optical and electrical properties of the films were investigated. The results show that the electrical properties of the films are greatly improved with the increase of annealing temperature