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HfO2 films on silicon substrates have been prepared by electron beam evaporation in ultrahigh vacuum using atomic oxygen.Synchrotron radiation photon-electron spectroscopy was used to investigate the thermal stability of HfO2 films under an ultrahigh vacuum environment.At the temperature of 750℃,HfO2 films begin to decompose.After being further annealed at 850℃ for 3 min,HfO2 films decomposes completely,partially to form Hf-silicide and partially to form gaseous HfO.Two chemical reactions are responsible for this decomposition process.A small amount of Hf-silicide,which is formed at the very beginning of growth,may result in the films grown subsequently to be loosened,and thereby leads to a relatively low decomposition temperature.
HfO2 films on silicon substrates have been prepared by electron beam evaporation in ultrahigh vacuum using atomic oxygen. Synchrotron radiation photon-electron spectroscopy was used to investigate the thermal stability of HfO2 films under an ultrahigh vacuum environment. At the temperature of 750 ° C, HfO2 films begin to decompose. After being further annealed at 850 ° C for 3 min, HfO2 films decomposes completely, partially to form Hf-silicide and partially to form gaseous HfO.Two chemical reactions are responsible for this decomposition process. A small amount of Hf-silicide , which is formed at the very beginning of growth, may result in the film grown readily to be loosened, and thereby leads to a relatively low decomposition temperature.