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一、引言大功率用的 GaAs 肖特基势垒栅场效应晶体管最近的进展引人注目,这就是在6～12千兆赫频段5～1瓦级的器件已经实现了产品化。虽然这些器件已被不断地运用到通讯机器发射部份终端的放大器上,但人们还是强烈希望得到更高频段的大功率和高增益器件。当前的一个器件研究课题是在 X 波段特别是从10千兆赫到 Ku 波段的超高频领域内研制出一定的功率增益的大功率器件。作为 J～X 波段的大功率器件,虽然我们研究过寄生参量小又适于高增益化的所谓“空间布线结构”的 GaAsFET,但是在10千兆赫以上的超高频段内,为了获得
I. INTRODUCTION Recent advances in high power GaAs Schottky barrier field effect transistors have drawn the attention of the public. This is where devices in the 5 to 1 watt range of 6 to 12 GHz band have been commercialized. Although these devices have been continuously applied to the amplifiers of the transmitting terminals of the communications equipment, there is a strong desire to obtain high-power and high-gain devices in higher frequency bands. A current device research project is to develop high-power devices with certain power gain in the X-band, especially in the UHF range from 10 GHz to Ku-band. As a high-power device in the J-X band, we have studied so-called “space wiring structure” GaAsFETs that have small parasitic parameters and are suitable for high gain. However, in the ultra-high frequency band above 10 GHz,