论文部分内容阅读
采用射频磁控溅射法在有机衬底PPA上低温制备出Zn-Sn-O透明导电膜,并对薄膜的结构和光电性质进行了研究。制备的薄膜为非晶结构,薄膜与衬底有良好的附着性。性能良好的有机衬底Zn-Sn-O透明导电膜的电阻率为1.3×10~(-2)Ω·cm,载流子浓度为4.4×10~(19) cm~(-3),Hall迁移率为12.4 cm~2·V~(-1)·s~(-1)。薄膜在可见光范围的平均透过率达到了82％。
The Zn-Sn-O transparent conductive films were prepared by RF magnetron sputtering at low temperature on the organic substrate PPA. The structure and photoelectric properties of the films were also studied. The prepared film has an amorphous structure, and the film has good adhesion with the substrate. The resistivity of Zn-Sn-O transparent conductive film with good performance is 1.3 × 10 -2 Ω · cm, the carrier concentration is 4.4 × 10 ~ (19) cm -3, Hall The mobility was 12.4 cm -2 · V -1 · s -1. The average transmittance of the film in the visible range reached 82%.