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本文报导电子探针和x射线衍射对碲镉汞晶体着色浸蚀层成分和结构的分析结果。验证了着色浸蚀法显示镉含量分布的正确性。应用该方法对碲溶剂法制备晶体的横向和纵向组份分布均匀性进行了观察。显示出长晶过程中的动态图景。晶绽头部固-液界面呈弯月形,晶绽中部横向分布相对均匀,纵向分布有一段相对均匀区。但其中存在很窄的分凝带(贫镉),这将影响到器件性能的重复性。该方法可用作对碲镉汞材料中均匀区进行预选。
This paper reports the results of the analysis of the composition and structure of the colored etching layer of HgCdTe by electron probe and x-ray diffraction. It is verified that the color etching method shows the correctness of the distribution of cadmium content. This method was used to observe the distribution uniformity of the transverse and longitudinal components of the crystals prepared by tellurium solvent method. Shows the dynamic process of growing the picture. Crystalline head of the solid-liquid interface showed a meniscus, crystal bloom transverse distribution of the middle is relatively uniform, vertical distribution of a relatively uniform area. However, there is a very narrow segregation zone (cadmium poor), which will affect the repeatability of device performance. This method can be used as a pre-selection of uniform regions in HgCdTe materials.