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采用正交试验方法进行了用于CCD栅复合介质的SiO2和Si3N4厚度的配比实验,研究了退火温度和退火气氛对复合介质界面态的影响,获得了最佳的复合介质SiO2与Si3N4的厚度配比,使得Si-SiO2界面态密度满足设计制作要求。
The experiment of the ratio of SiO2 and Si3N4 for CCD gate dielectric was carried out by orthogonal test. The influence of annealing temperature and annealing atmosphere on the interfacial state of the composite was studied. The optimum thickness of composite SiO2 and Si3N4 Ratio, making the Si-SiO2 interface state density to meet the design requirements.