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本文对短沟道MOSFET沟道区的硼、砷离子注入分布采用二次函数及指数函数的分段函数分布近似,并利用格林函数法求解二维泊松方程,从而导出非均匀分布短沟道MOS FET的表面势和阈值电压的解析模型.它计及注入能量、剂量、退火温度、退火时间等工艺参数的影响,也包含了漏极电压V_D和栅氧化层厚度等因素的影响.本解析模型的结果与用MINI-MOS数值模拟的结果符合得很好,具有简单、实用的特点.适用于改进有关电路分析程序例如SPICE中的模型.
In this paper, the distribution of boron and arsenic ions in the channel region of short-channel MOSFET is approximated by the piecewise function distribution of exponential function and exponential function. The two-dimensional Poisson equation is solved by Green’s function method, MOS FET surface potential and threshold voltage analysis model which takes into account the injection of energy, dose, annealing temperature, annealing time and other process parameters, but also includes the drain voltage V_D and gate oxide thickness and other factors. The results of the model are in good agreement with the results of the MINI-MOS numerical simulation and are simple and practical for improving the model in circuit analysis programs such as SPICE.