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本文报道一种适于做a-Si电池窗口材料的高电导宽带隙微晶-非晶Si:H薄膜。这种材料采用辉光放电法在高功率下分解SiH_4和B_2H_6混合气体制得,室温电导率σ_(?)最高为20(Ω-cm)~(-1),相应光学带隙E_(opt)为1.70—1.75eV,电导激活能为0.02eV。X射线和电子衍射分析表明,电导率10~(-4)(Ω-cm)~(-1)或更高的膜显示微晶(μc~-)相。随电导率的增加,膜结构逐渐向全晶化相变化。讨论了制备高电导宽带隙p型Si:H膜的淀积条件。
This paper reports a high conductance wide bandgap microcrystalline - amorphous Si: H film suitable for a-Si cell window material. The material was prepared by glow discharge method and the decomposition of SiH_4 and B_2H_6 mixed gas at high power. The highest conductivity σ_ (?) At room temperature was 20 (Ω-cm) -1, the corresponding optical band gap E_ (opt) Is 1.70-1.75eV and the conductance activation energy is 0.02eV. X-ray diffraction and electron diffraction analysis showed that the films with a conductivity of 10 -4 (Ω-cm) -1 or higher exhibited a microcrystalline (μc ~ -) phase. With the increase of electrical conductivity, the film structure gradually changes to the full crystallization phase. The deposition conditions for preparing high conductivity wide bandgap p-type Si: H films are discussed.