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在正统理论的基础上,使用主方程法建立了金属结单电子晶体管的器件模型和算法流程.将电容、电阻和温度等参数代入器件模型得到的I V特性曲线与实验结果吻合较好,从而验证了模型、算法以及程序流程的正确性.此外,通过详细讨论模拟与实验的三组曲线差别,得到模型使用主方程的稳态解是导致模拟与实验之间结果存在差别的主要原因,即求解含有时间的主方程将增加模拟精度;而且,指出镜像电荷引起的电势使电流随电压呈现指数增加的主要影响因素,明显偏离理论模拟的线性增加趋势.
Based on the orthodox theory, the main equation method was used to establish the device model and the algorithm flow of the metal-bonded electronic transistor.The IV curves obtained by substituting capacitance, resistance and temperature parameters into the device model are in good agreement with the experimental results to verify The correctness of the model, the algorithm and the program flow are also discussed.In addition, by discussing the difference of the three sets of curves between simulation and experiment in detail, it is found that the steady-state solution of the master equation using the model is the main reason leading to the difference between the simulation results and the experimental results The main equation with time will increase the simulation accuracy. Moreover, it is pointed out that the main influence factor of the electric potential caused by the image charge to increase exponentially with the voltage obviously deviates from the linear increase tendency of the theoretical simulation.