量化分析了低温杂质重掺杂条件下，采用非简并、简并近似和非抛物线能带结构对硅半导体中爱因斯坦关系的影响。主要分析结果表明：对于低温重掺杂硅中的爱因斯坦关系，有必要进行简并近似的修正，在甚高掺杂时，还有必要进行更为精确的非抛物线能带结构的修正；修正因子随温度的上升而下降，随掺杂浓度的上升而上升。具有很强的物理指导意义。 The effects of non-degenerate, degenerate approximations and non-parabolic band structures on the Einstein relationship in silicon semiconductors were quantitatively analyzed under the conditions of heavy doping at low temperature. The main results show that it is necessary to modify the degenerate approximation for the Einstein relation in low-temperature heavily-doped silicon. For very high doping, it is necessary to correct the non-parabolic band structure more accurately. The correction factor decreases with increasing temperature and increases with increasing dopant concentration. Has a strong physical guiding significance.