An integrated power divider implemented in GaAs technology

来源 :Journal of Semiconductors | 被引量 : 0次 | 上传用户:lyfhua
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A compact lumped integrated power divider with low insertion loss using 0.5 m GaAs pHEMT technology is presented. The proposed power divider uses the-type LC network for transmission line equivalence and a thin film resistor for isolation tuning simultaneously. The quality factor of the inductor is analyzed and synthesized for insertion-loss influence. The measured insertion loss is less than 0.5 dB when the operating frequency is within the range of 5.15–6.15 GHz. The return loss and isolation are better than 15 dB and 20 dB, respectively.The compact dimension of the power divider is as small as 0.9 0.85 mm2. The measured results agree well with the simulated ones. A compact lumped integrated power divider with low insertion loss using 0.5 m GaAs pHEMT technology is presented. The proposed power divider uses the-type LC network for transmission line equivalence and a thin film resistor for isolation tuning simultaneously. The quality factor of the inductor is The measured insertion loss is less than 0.5 dB when the operating frequency is within the range of 5.15-6.15 GHz. The return loss and isolation are better than 15 dB and 20 dB, respectively. compact dimension of the power divider is as small as 0.9 0.85 mm2. The measured results agree well with the simulated ones.
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