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本文研究了用掺氧原子的半绝缘多晶硅(SIPOS)膜作MOSIC、特别是无阻挡沟道结构的C/MOSIC的表面钝化层。SIPOS膜是用一氧化二氮和硅烷于氮气氛中进行化学汽相反应在硅衬底表面上淀积而成的。SIPOS膜是半绝缘的,而实质上是电中性的。用3000ASIPOS和6000ASiO_2膜组成的双层系统代替无沟道阻挡结构的C/MOSIC中的厚二氧化硅层,并呈现极好的场钝化性能,即:漏-源漏泄电流小、漏击穿电压高、寄生阈值电压高。而且,用SIPOS膜钝化的硅表面在严格的偏压温度应力下显示出高的稳定性。结果表明:用SIPOS膜钝化的C/MOSIC不需要有沟道阻挡扩散区,并能在高电压下工作,从而导致较大的集成密度和较好的可靠性。
In this paper, we study the surface passivation of C / MOSIC with MOSOS, especially non-blocking channel structure, using oxygen-doped semi-insulating polysilicon (SIPOS) film. The SIPOS film is deposited on the surface of a silicon substrate by chemical vapor phase reaction with nitrous oxide and silane in a nitrogen atmosphere. The SIPOS film is semi-insulating, but essentially electrically neutral. The double layer system consisting of 3000ASIPOS and 6000ASiO 2 films replaces the thick silicon dioxide layer in the C / MOSIC without trench barriers and exhibits excellent field passivation properties, ie small drain-to-source leakage current, High voltage, high parasitic threshold voltage. Furthermore, silicon surfaces passivated with SIPOS films show high stability under severe bias temperature stress. The results show that the passivation of COSICOS with SIPOS film does not require a channel blocking diffusion region and can work at high voltage, resulting in greater integration density and better reliability.