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本文介绍利用激光椭圆测厚仪和硅的有关数据测定Hg Cd Te表面阳极氧化膜厚度的实验结果。对一系列样品进行了测量,结果表明氧化膜厚度与氧化成膜条件有一定的对应关系,同时测得的薄膜光学折射率和用MOS电容法计算得的薄膜介电常数这两个重要参数的值均与其它文献报导的数值很好符合。这表明利用椭圆仪测定Hg Cd Te表面薄膜的厚度,若缺少一套专门的有关数据,则可用硅的有关数据处理测量结果。
This paper presents the experimental results of measuring the anodic oxide film thickness on the surface of Hg Cd Te by using the data of laser ellipsometer and silicon. A series of samples were measured and the results showed that there was a certain relationship between the oxide film thickness and the oxide film forming conditions. The simultaneous measurement of the film optical refractive index and the film dielectric constant calculated by the MOS capacitance method, two important parameters Values are in good agreement with the values reported in other literature. This indicates that the thickness of Hg Cd Te surface film is determined by ellipsometry. In the absence of a specific set of relevant data, the relevant data of silicon can be used to process the measurement results.