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金属钽片在阳极氧化处理过程中,在不同的电解液、电解电压及通电时间下,会形成不同厚度的Ta_2O_5层,即可制成各种不同耐压规格的钽电容器。钽基片上的Ta_2O_5层厚度与阳极氧化工艺之间的数量关系过去不太清楚。用离子束背散射方法便可很好地解决这一问题,并且具有简便、可靠、无需标准样品、不破坏样品等优点。钽片的阳极氧化处理一般有两种方法。一种是先预赋能,然后再赋能;另一种是不预赋能而仅
Tantalum chip in the anodic oxidation process, in different electrolytes, electrolytic voltage and power time, the formation of different thickness Ta_2O_5 layer, can be made of different tantalum capacitors with different specifications. The quantitative relationship between the thickness of the Ta_2O_5 layer on the tantalum substrate and the anodization process was not well understood. Ion beam backscattering method can be a good solution to this problem, and has the advantages of simple, reliable, no standard sample, no damage to the sample. Anodizing tantalum sheets generally have two methods. One is the first pre-empowerment, and then energized; the other is not pre-emptive but only