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题 目 期页 工作 报告用氧化铝(CdO)做宽发射区的磷 化钢平而型扩散晶体管……………(一1)An-GaAs、Ni-GaAs可见光接收器…(一6)低失真低噪声高频中功率晶体管…… 3DA3……………………………(一 9)关于硅低频低噪声晶体管的研究……(一15)一种新的压敏效应 一汞一硅肖特基 势垒的压容效应的研究……………(一21)LPE生长中NP表面热分解的抑制…(一24)MOS反型层中迁移率的测量技术…(一28)由MOS电容瞬态技术确定表面层内少子产生寿命的纵向分布………………(一32)
Title page Work report Phosphorized steel with wide emitting area made of aluminum oxide (CdO) Flat type diffused transistor ............... (1) An-GaAs, Ni-GaAs visible light receiver ... Low-Noise, High-Frequency, Mid-Power Power Transistors ...... 3DA3 .................................... (9) A Study on Silicon Low Frequency Low Noise Transistors ... (15) A Novel Voltage Sensitivity Effect - Schottky barrier compression effect of ............... (a 21) LPE growth inhibition of NP surface thermal decomposition ... (a 24) MOS inversion layer mobility measurement ... (a 28) from MOS Capacitance Transient Technique to Determine Longitudinal Distribution of Lifetime of Legs in Surface Layer .................. (一 32)