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本文介绍我们在利用分子束外延技术生长HgCdTe材料方面对改进材料质量、重复性和柔软性所取得的进展。根据一定的判断标准,对超过100片的n型外延片的载流子浓度和迁移率、晶体缺陷密度和位错密度给出了统计数据和成品率。另外,还给出了少数载流子寿命的数据。在降低杂质浓度方面,经过不断的改进,我们已经获得可重复的、n型低载流子浓度:(2-10)×10~(14)cm~(-3),而且电子迁移率很高。数据表明,低位错密度的薄膜是在CdZnTe衬底上生长出来的,衬底中Zn的浓度范围可以很宽。从九次生长材料的结果来看,首先在实验演示方面取得了成功,可以进一步评价材料质量的可重复性和波段调节方面的可适应性。这些结果证明:用分子束外延(MBE)技术来柔性制造HgCdTe红外焦平面列阵的材料是很有前途的。
This article describes our progress in improving material quality, repeatability and flexibility in growing HgCdTe materials using molecular beam epitaxy. Based on certain criteria, statistics and yield are given for the carrier concentration and mobility, the crystal defect density and the dislocation density for more than 100 n-type epitaxial wafers. In addition, data on minority carrier lifetime are also given. We have achieved repeatable, n-type low carrier concentration (2-10) x 10 ~ (14) cm ~ (-3) and high electron mobility in the reduction of impurity concentration. . The data shows that films with low dislocation density are grown on CdZnTe substrates, and the concentration of Zn in the substrate can be wide. From the results of nine growth materials, the first successes were demonstrated experimentally to further evaluate material quality reproducibility and band-conditioning adaptability. These results demonstrate that the use of molecular beam epitaxy (MBE) technology to flexibly fabricate HgCdTe infrared focal plane array of materials is very promising.