本文叙述了化合物材料特性研究不断深入对提高材料和器件质量的重要性,简单介绍了研究化合物材料中杂质和缺陷的主要方法及其进展。着重对化合物材料特性研究的一些方面作了讨论,其中包括:1)高纯砷化镓中的电子迁移率以及浅杂质的识别;2)砷化镓中深中心性质的研究;3)化合物半导体中缺陷的电镜研究;4)半绝缘砷化镓的研究;5)磷化铟中杂质和缺陷的性质。 This article describes the importance of the research on the properties of compound materials to improve the quality of materials and devices, and briefly introduces the main methods and advances of studying the impurities and defects in compound materials. Some aspects of the study of the properties of compound materials are discussed, including: 1) electron mobility in high-purity gallium arsenide and the identification of shallow impurities; 2) deep center properties of gallium arsenide; 3) compound semiconductors Electron microscopy studies of defects; 4) Study of semi-insulating gallium arsenide; 5) Properties of impurities and defects in indium phosphide.