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本文从讨论半导体光电发射出发,提出了光电子能量损失速率的概念.运用所导出的理论公式,对实用锑碱光阴极的光电子逸出深度和逸出几率做了计算.结果表明:S-11光阴极的最大逸出深度为284A.与之相比,多碱光阴极有较大的逸出深度,这应归因于它有合适的带隙,较高的二次电子空穴对生成阈值以及较低的有效电子亲和势.最后,分析了阴极厚度对长波、短波响应的影响,给出了S-20VR光阴极的实际厚度约为1300A.
In this paper, the concept of photo-electron energy loss rate is put forward from the discussion of photoemission of semiconductor. The theoretical formula of derivation is used to calculate the photoelectron escape depth and escape probability of practical antimony-base photocathode. The results show that S-11 light The maximum escape depth of the cathode is 284 A. In contrast, the multi-alkali photocathode has a larger escape depth due to its proper bandgap, higher secondary electron-hole pair generation threshold, and Lower effective electron affinities.Finally, the influence of cathode thickness on longwave and shortwave response is analyzed, and the actual thickness of S-20VR photocathode is about 1300A.