采用直流辉光等离子体辅助反应蒸发法在玻璃基片上沉积了锡掺杂的氧化铟锡(ITO)透明导电膜,在沉积过程中保持了辉光放电电流、氧分压、氧流量、蒸发速率等工艺参数不变,而基片温度由室温变化到达300℃。用四探针法测量了膜的方法和用直流法测量了膜的霍尔系数,计算出膜的电阻率p、霍尔迁移率μ、载流子浓度n,从而研究了基片温度对膜的导电性能的影响。 A tin-doped ITO transparent conductive film was deposited on a glass substrate by DC glow plasma assisted reactive evaporation. The glow discharge current, partial pressure of oxygen, oxygen flow, evaporation rate Other parameters unchanged, while the substrate temperature changes from room temperature reached 300 ℃. The method of measuring the membrane by the four-probe method and the Hall coefficient of the membrane by the direct current method were used to calculate the film resistivity p, the Hall mobility μ and the carrier concentration n, Of the conductive properties.