对一款700 V功率场效应管失效芯片进行亮点分析,并通过TCAD软件进行数值仿真验证失效原因。最后对失效管的终端进行了改进设计,在215μm的终端长度上实现了779 V的耐压。结果表明,其硅表面最大场强为2.65×105 V/cm,有效解决了芯片失效问题,提高了器件的可靠性。同时终端长度比原失效终端长度缩小了13%,有效减小了器件的面积。 The bright spot analysis of a 700 V power FET failed chip was carried out and the cause of failure was verified by numerical simulation with TCAD software. Finally, the termination of the failed tube was modified to achieve a withstand voltage of 779 V at a terminal length of 215 μm. The results show that the maximum field intensity of the silicon surface is 2.65 × 105 V / cm, which effectively solves the chip failure problem and improves the reliability of the device. At the same time, the length of the terminal is reduced by 13% than that of the original invalid terminal, which effectively reduces the area of ​​the device.