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对以Si为衬底的薄膜 ,当x >0 .5时 ,薄膜导电性由超导态转向半导体态。我们研究了以Si为衬底有ZrO2 过渡层和以Si为衬底有SiO2 过渡层的两种YBaCuO薄膜。我们使用X射线衍射方法测定了这两种薄膜的物相结构 ,这两种薄膜均属于多晶态。在此基础上 ,又做了各元素的比例实验 ,发现了YBaCuO的物理结构和电学性能的变化。找出了适用于测辐射热计的最佳比例的Y1Ba2 Cu3 O7 x薄膜。另外做了这种薄膜的电阻率随温度的变化而改变的实验。用该薄膜研制的测辐射热计 (bolometers) ,其响应率 (R)、探测率 (D )、噪声等效功率(NEP)、热响应时间 (t)均有改善。经理论计算与实验结果很好的吻合。这种调整比例后的薄膜的温度电阻系数 (TCR)预计高达 3.98%K-1,在 1 0Hz至 5 0 0Hz频率范围内完成了信号和噪声测试。调整偏置电流能清晰地识别热噪声和 1 /f噪声以及TCR变化。实验表明比例约为 1∶0 .5∶2∶5的YbaCuO多晶态半导体薄膜所制备的bolometer,其响应率Rv=4× 1 0 4V/W ,在lμA偏置电流 ,1 2Hz斩波频率下探测率D >1× 1 0 8cmHz1/ 2 /W。
For Si-based thin films, when x> 0.5, the conductivity of the thin film is switched from the superconducting state to the semiconducting state. We have investigated two kinds of YBaCuO thin films with a Si02-based ZrO2 transitional layer and a Si-based SiO2 transitional layer. We used the X-ray diffraction method to determine the phase structure of these two films, both of which belong to the polycrystalline state. On this basis, we also do the proportional experiment of each element and found the change of physical structure and electrical property of YBaCuO. The optimum ratio of Y1Ba2Cu3O7x thin film suitable for bolometers was found. In addition, the experiment of changing the resistivity of the film with the change of the temperature was done. The bolometers developed with this film have improved response (R), detection (D), noise equivalent power (NEP), and thermal response time (t). The theoretical calculation and experimental results are in good agreement. The temperature-resistivity (TCR) of the film after this adjustment is expected to be as high as 3.98% K-1 and the signal and noise tests are done in the frequency range of 10 Hz to 500 Hz. Adjust the bias current can clearly identify thermal noise and 1 / f noise and TCR changes. Experiments show that the ratio of about 1:05: 2: 5 YbaCuO polycrystalline semiconductor thin film prepared bolometer, the response rate Rv = 4 × 104V / W, in lμA bias current, 12Hz chopping frequency Under the detection rate D> 1 × 108cm1 / 2 / W.