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给出了ＨＥＭＴ和ＰＨＥＭＴ的数学－物理模型。系统地描述了材料的隔离层、平面调制掺杂层、势垒耗尽层等材料结构尺寸和异质结界面二维电子气浓度及器件沟道电流之间的相互关系。
The mathematical-physical model of HEMT and PHEMT is given. The relationship between material structure size, two-dimensional electron gas concentration at the heterojunction interface and device channel current is systematically described.