本文研究了ＭＯＳ结构击穿电压与极性和栅面积之间的相互依赖关系、栅介质中Ｆ离子的引入对击穿电压的影响．结果表明，击穿电压受热电子贯穿方向制约；栅面积与击穿电压之间无明显依赖关系；一定量的Ｆ离子引入栅介质对击穿电压大小不造成多大影响．用一定模型解释了实验结果 In this paper, the interdependence between breakdown voltage and polarity and gate area of ​​MOS structure and the influence of F ion in gate dielectric on breakdown voltage are studied. The results show that the breakdown voltage is controlled by the direction of the heated electrons. There is no significant dependence between the gate area and the breakdown voltage. The introduction of a certain amount of F ions into the gate dielectric does not affect the breakdown voltage greatly. The experimental results are explained by a certain model