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为了提高砷化镓单晶的完整性和均匀性,中科院半导体研究所和航天部501所合作,在太空中完成了从熔体生长砷化镓单晶的实验。用电解腐蚀,透射电子显微镜(TEM)和阴极莹光(CL)对地面籽晶部分和空间重熔晶体部分的结构性质进行了比较性现察,实验结果如下:1)用KOH溶液电解腐蚀完成了对该晶体的杂质条纹显示,结果表明:地面生长的单晶有明显的杂质条纹,空间生长的晶体中无杂质条纹(图1)。2)在地面籽晶和空间生长晶体的界面处存在一个晶体完整性较高的区域。CL形貌相上显示出亮带(图2)。TEM观察发现界面区的微缺陷浓度远低于基体,存在一个宽度至少为5μm的“清洁区”,在
In order to improve the integrity and uniformity of gallium arsenide single crystal, Institute of Semiconductors, Chinese Academy of Sciences and the Ministry of Space 501 in cooperation completed in space from the gallium arsenide single crystal growth experiment. Electrolytic corrosion, transmission electron microscopy (TEM) and cathodal luminescence (CL) were used to compare the structural properties of the ground seed crystals and the space recrystallized crystals. The experimental results are as follows: 1) Electrolytic etching with KOH solution was completed The impurity stripes of the crystal display, the results show that: the growth of single crystals on the ground there are obvious impurity stripes, space-grown crystals without impurity stripes (Figure 1). 2) There is a region of high crystal integrity at the interface of ground-grown and spatially grown crystals. The bright appearance on the CL topography (Figure 2). TEM observation revealed that the micro-defect concentration in the interface area was much lower than that of the substrate, with a “clean area” of at least 5 μm in width,