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运用同步辐射白光X射线形貌术分析了YVO4 的结构和缺陷行为 ,也观测了YVO4 晶体 (0 0 1)、(10 0 )面的缺陷。发现在 (0 0 1)面出现应力生长区、沿 [10 0 ]方向的位错线以及晶体中镶嵌结构。运用白光形貌术拍摄到的劳埃斑 ,证明晶体为四方晶系。确定了小角晶界是引起多晶的主要原因。采用电子探针仪分析了散射颗粒形成是由杂质铁和铝的引入造成
The structures and defects of YVO4 were analyzed by synchrotron radiation X-ray topography, and the defects of (1001) and (100) planes of YVO4 were also observed. It is found that there are stress growth zones in the (0 0 1) plane, dislocation lines in [10 0] direction and inlaid structure in the crystal. The use of white topography photographed Laai spot, that the crystal is tetragonal crystal system. It is confirmed that the small-angle grain boundary is the main reason of polycrystal. The electron probe was used to analyze the formation of scattering particles caused by the introduction of impurity iron and aluminum