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采用钟形波调制的方波脉冲电源以恒电流模式在导电玻璃基底(ITO)上电沉积制得了CuInSe2薄膜,用扫描电子显微镜(SEM)、X射线能谱仪(EDS)和X射线衍射仪(XRD)对在不同频率下制备的CuInSe2薄膜的表面形貌、成分组成和组织结构进行了研究.结果发现,在合适频率下制得的薄膜表面平整,颗粒均匀致密,成分接近理想化学计量比,具有单一的黄铜矿结构.在氮气气氛下退火处理后,薄膜结晶性能有较大提高.同时,通过薄膜截面分析发现,在脉冲恒电流模式下沉积速率较快,膜层与基底结合紧密,对工业化生产具有重要意义.
The CuInSe2 thin films were fabricated by galvanostatic deposition on a conductive glass substrate (ITO) using a square wave pulsed power supply modulated by a bell-shaped wave. Scanning electron microscopy (SEM), X-ray energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD) were used to investigate the surface morphology, composition and structure of CuInSe2 films prepared at different frequencies.The results showed that the films prepared at the proper frequency had a smooth surface with uniform and compact particles and close to the ideal stoichiometry , Which has a single chalcopyrite structure.The crystallinity of the films is greatly improved after annealing in nitrogen atmosphere.At the same time, through the film cross-section analysis, it is found that the deposition rate is faster in the pulse constant current mode, and the film layer is closely integrated with the substrate , Is of great significance to industrialized production.