化学气相沉积(CVD)是制备固体薄膜,生产复合材料的重要方法之一。但由于沉积温度较高,使应用范围受到很大限制。因此,对降低CVD的沉积温度,进行了广泛的研究。早在十多年前就发现,用等离子体激发CVD中反应物的分子,如果激发能量超过相应的热激活能,则在低温下,能发生非平衡沉膜反应。在1977年第6届CVD国际会议上,曾发表了数篇有关等离子体激发化学气相沉积(PCVD)的论文,主要讨论各种硅膜。同年,在第1届IPAT国际会议 Chemical vapor deposition (CVD) is one of the important methods for preparing solid films and producing composite materials. However, due to the higher deposition temperature, the application range is greatly limited. Therefore, extensive studies have been conducted on reducing the CVD deposition temperature. As early as more than a decade ago, it has been found that plasma excited reactants in CVD react with non-equilibrium sinking reactions at low temperatures if the excitation energy exceeds the corresponding thermal activation energy. At the 6th International CVD Conference in 1977, several papers on plasma-enhanced chemical vapor deposition (PCVD) were published, focusing on various silicon films. In the same year, at the 1st IPAT International Conference