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用质子核磁共振（1HNMR）方法对等离子体化学气相淀积非晶氢化氮化硅薄膜（PECVD－α－SiNx：H）进行测量，分析膜中H的含量和分布与淀积温度、射频功率等工艺条件的关系，以及退火的影响。
The PECVD-α-SiNx: H plasma-enhanced chemical vapor deposition (PECVD-α-SiNx: H) was measured by proton nuclear magnetic resonance (1HNMR) method. The content and distribution of H in the film and the deposition temperature, RF power and so on The relationship between process conditions, and the effects of annealing.