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为提高离子注入工艺中水平扫描输入剂量的均匀性,研究了离子束水平扫描速度对各处注入剂量的影响规律,建立了水平方向注入剂量分布曲线的数学模型。通过简化离子束斑轮廓,提出了一种实用的离子注入水平扫描均匀性控制算法,实际校正过程要经过多次循环,才能使离子注入水平扫描的均匀性收敛到目标范围内。在离子注入工艺中,利用该算法对束线水平扫描均匀性成功进行了校正实验,校正前的水平扫描均匀性为10%,经过5次校正,水平扫描均匀性达到1%,比校正前提高了一个数量级,验证了这种算法的可行性与有效性。
In order to improve the uniformity of horizontal scanning input dose in ion implantation process, the effect of horizontal scanning speed of ion beam on the injected dose was studied, and a mathematical model of dose distribution curve in horizontal direction was established. By simplifying the outline of the ion beam spot, a practical algorithm for horizontal uniformity control of ion implantation is proposed. The actual calibration process needs to go through many cycles to make the uniformity of ion implantation horizontal scanning converge to the target range. In the ion implantation process, the algorithm was successfully used to calibrate the horizontal uniformity of the beam. The horizontal scanning uniformity before correction was 10%. After 5 times of correction, the horizontal scanning uniformity reached 1%, which was higher than that before correction An order of magnitude, verify the feasibility and effectiveness of this algorithm.