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用脉冲激光沉积(PLD)方法在Si(111)衬底上制备了ZnO薄膜。以325 nm He-Cd激光器为光源对薄膜进行了荧光光谱分析,用X射线衍射仪(XRD)和原子力显微镜(AFM)分别对薄膜的结构和形貌进行了分析。脉冲激光沉积方法的主要生长参量为氧压、激光重复频率、生长温度和激光能量。通过控制这些参量变量,研究了这些参量对ZnO薄膜发光特性的影响,得到了用于紫外发光的ZnO薄膜生长的优化条件:发现在温度为650℃左右、氧压50 Pa左右、频率5 Hz左右的范围内能得到半峰全宽较窄,强度较大的紫外发光峰。分析认为紫外峰主要是由激子辐射复合发光形成的,绿光带主要和OZn的存在密切相关,氧空位是蓝光发射的重要原因。
ZnO thin films were deposited on Si (111) substrates by pulsed laser deposition (PLD). Fluorescence spectra of the films were measured using a 325 nm He-Cd laser as a light source. The structure and morphology of the films were analyzed by X-ray diffraction (XRD) and atomic force microscopy (AFM). The main growth parameters of pulsed laser deposition method are oxygen pressure, laser repetition frequency, growth temperature and laser energy. By controlling these parameters, the influence of these parameters on the luminescent properties of ZnO thin films has been investigated. The optimum conditions for the growth of ZnO thin films have been obtained. The optimum conditions for the growth of ZnO thin films are found at about 650 ℃, oxygen pressure about 50 Pa and frequency about 5 Hz Of the range can be narrow full width at half maximum, the intensity of the larger UV peak. It is concluded that the UV peak is formed mainly by the recombination of exciton radiation and the green band is mainly related to the existence of OZn. Oxygen vacancy is an important reason for blue emission.