双极型晶体管在受到中子辐照之后,要引起电流增益和饱和压降的退化。本文主要分析:1.不同纵向参数的器件,电流增益在各个区域的退化程度,且与测试h_(FE)时的电流密度及h_(FEo)的关系;2.影响饱和压降变化的各种因素,结果表明电导调制宽度X_c的减小是引起饱和压降退化的主要原因;3.利用加固器件的辐照结果对寿命损伤常数K值进行了推算,由于K是杂质浓度的函数,不同区域K值不同。 Bipolar transistors are subject to neutron irradiation to cause degradation of current gain and saturation voltage drop. In this paper, the main analysis: 1. The device with different longitudinal parameters, the current gain in each region of the degree of degradation, and the test h_ (FE) current density and h_ (FEo) relationship; The results show that the decrease of conductance modulation width X_c is the main cause of the degradation of saturation pressure drop.3. The lifetime damage constant K value is estimated by the irradiation result of the reinforcement device. Because K is a function of impurity concentration, K value is different.