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采用脉冲测试电路,测试了半绝缘GaAs光导开关(PCSS)在锁定工作模式下的偏置电场及触发光能阈值。测试结果表明,在一定光能范围内,电场阈值随光能阈值的增大类似于指数关系减小;激励光能在数10μJ下,半绝缘光导开关偏置电场阈值为9 kV/cm。当激励光脉冲能量大于0.78 mJ时,光导开关在不同偏压下都不能工作于锁定工作模式而进入线性模式。依据实验测试结果,提出了高倍增偶极畴模型,给出了半绝缘GaAs光导开关的电场与光能阈值的计算结果,在实验误差范围内,理论分析与实验测试结果符合。
The impulse electric field threshold and triggering threshold of semi-insulating GaAs photoconductive switch (PCSS) in locked mode were tested by pulse test circuit. The test results show that the threshold of the electric field decreases with the increase of the light threshold within a certain range of light energy, and the threshold of the bias voltage of the semi-insulating photoconductive switch is 9 kV / cm with the excitation light energy of 10 μJ. When the excitation light pulse energy is greater than 0.78 mJ, the photoconductive switch can not work in the locked mode under different bias to enter the linear mode. Based on the experimental results, a high multiplication dipole domain model is proposed. The calculation results of the electric field and the light energy threshold of semi - insulating GaAs photoconductive switches are given. The theoretical analysis and the experimental results are within the experimental error range.