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采用改进的垂直布里奇曼生长法生长CdZnTe(CZT)单晶。生长完成后,选取了10~60 K/h不同速率降温处理。采用红外透射显微镜和多道能谱仪分别测试不同降温速率的晶片内部Te夹杂相分布和能谱响应。结果表明,10~30K/h之间的慢速降温会导致晶体内部出现较大尺寸的Te夹杂(>10μm),40 K/h以上的快速降温所得到的晶体内部主要以小尺寸(<10μm)为主。同时快速降温会导致晶体内部的Te夹杂浓度大量增加,并且降温速率越快,Te夹杂浓度越大。此外,降温速率过慢所得到晶片的能谱分辨率较差,但是降温速率过快也会影响到晶片的性能。40 K/h的降温速率所得到的晶片能谱性能较好,实验结果表明:大尺寸或者高浓度的Te夹杂都不利于能谱响应,保留一定浓度的小尺寸Te夹杂的晶体能谱性能较佳。
CdZnTe (CZT) single crystals were grown by the modified vertical Bridgman growth method. After the growth is completed, 10 ~ 60 K / h cooling rate is selected. Infrared transmission microscope and multi-channel energy dispersive spectroscopy were used to test the Te intercalation phase distribution and energy spectrum response of the wafer with different cooling rates. The results show that slow cooling between 10 ~ 30K / h leads to larger Te inclusions (> 10μm) in the crystal. The rapid cooling below 40 K / h leads to the formation of small inclusions (<10μm ) Based. At the same time rapid cooling will lead to a large increase in the concentration of Te inclusions inside the crystal, and the faster the cooling rate, the greater the concentration of Te inclusions. In addition, the slow cooling rate of the resulting chip spectrum resolution is poor, but the cooling rate too fast will affect the performance of the wafer. The experimental results show that the large size or the high concentration of Te inclusions are not conducive to the spectral response, while the retention of a small concentration of Te inclusions in a certain concentration spectrum performance than the cooling rate of 40 K / h good.