由于得到HgCdTe扩散长度Lp的标准测试结构会损伤p-n结单元,实验中广泛采用激光束诱导电流(LBIC)提取的等效扩散长度L来代替Lp.本文通过二维数值模拟,分析了等效扩散长度L和扩散长度Lp的关系.二者的比例关系为L/Lp=1.1,该基本关系不受器件的关键参数如掺杂浓度、载流子寿命、载流子迁移率等的影响.最后将激光束诱导电流实验所获得的等效扩散长度L进行除1.1因子的修正,给出了实际HgCdTe光伏器件中的电子扩散长度. Since the standard test structure with Lp diffusion length of HgCdTe can damage the pn junction element, the equivalent diffusion length L extracted by laser beam induced current (LBIC) is widely used instead of Lp.In this paper, by two-dimensional numerical simulation, Length L and diffusion length Lp, the relationship between the two is L / Lp = 1.1, and the basic relationship is not affected by the key parameters of the device such as doping concentration, carrier lifetime, carrier mobility, etc. Finally The equivalent diffusion length L obtained from the experiment of laser beam induced current is corrected by the factor of 1.1, and the electron diffusion length in actual HgCdTe photovoltaic device is given.